Mohammad RazaghiUniversity of Kurdistan

Semiconductor Devices: Operation and Modeling

Graduate course (MSc) – Fall 2026

Course information

Textbooks

Course materials

For each chapter of the reference book there is a complete teaching package that runs in an ordinary web browser, with no installation. All curves and diagrams are computed from the equations of the book for one reference device (acceptor doping 1017 cm-3, oxide thickness 10 nm, width and length 10 µm), so you can change a parameter and see its effect immediately.

Chapter Topic Interactive slides Virtual labs and animations Python notebook
1 Semiconductors, junctions and MOSFET overview Open slides Open the labs Notebook
2 The two-terminal MOS structure Open slides Open the labs Notebook
3 The three-terminal MOS structure Open slides Open the labs Notebook
4 The four-terminal MOS transistor Open slides Open the labs Notebook

MOS Virtual Lab Bench

A virtual measurement bench for the MOS transistor and capacitor. Choose a sample, set up the instrument (sweep the gate voltage, drain voltage, body bias or temperature), press Run to measure I–V and C–V curves, overlay several datasets, fit lines on the plots, and collect the plots in a notebook and report. It runs in the browser with no installation and no internet connection.

Open the MOS Virtual Lab Bench


MOS Study Companion

A single offline page with a guided study path for every chapter, 44 self-test questions with explanations, and a record of your own progress.

Open the MOS Study Companion


Note for downloading: if you save the materials on your own computer, keep the Study Companion, the Virtual Lab Bench, the four presentation files and the four “Chapter N visualizations” folders together in one folder so that all links keep working.

Syllabus

  1. Introduction (Chapter 1): semiconductors, carriers and Fermi level, drift and diffusion, contact potentials, the pn junction, overview of the MOSFET

  2. Two-terminal MOS structure (Chapter 2): flat-band voltage, potential and charge balance, surface potential, regions of inversion, MOS capacitance

  3. Three-terminal MOS structure (Chapter 3): contacting the inversion layer, body effect, strong inversion and the region map, contacted C-V

  4. Four-terminal MOS transistor (Chapter 4): drain current, charge-sheet model, drift and diffusion currents, model comparison, subthreshold operation

  5. Small-dimension effects and MOS small-signal modeling (as time permits)

Grading

Component Weight
Project 20%
Seminar 20%
Final exam 60%

Slides from earlier years (PDF)

Introduction

Two-terminal MOS

Three-terminal MOS