Semiconductor Devices · Chapter 3 · Instructor: Prof. Mohammad Razaghi
Four animations and six interactive labs that run in any browser, with no installation, for Chapter 3 of Tsividis and McAndrew. The lab models are also in the Colab notebook.
Thermal electrons from the n⁺ region climb onto the surface; V_CB raises the barrier.
Animation 2Side by side: supply from the n⁺ region versus thermal generation.
Animation 3V_CB drains electrons and widens the depletion region; the gate must work harder.
Animation 4Sweep V_CB at fixed gate voltage: ψ_S rises to meet ψ_sa and the layer vanishes.
Energy along the surface, E_Fn set by terminal C, surface electron density.
Visualization 2ψ_S and Q′_I families for several V_CB, with weak and strong approximations.
Visualization 3Square-root threshold shift, wider depletion, inversion charge versus V_GC.
Visualization 4Weak, moderate and strong inversion in the (V_CB, V_GB) plane.
Visualization 5Q′_I versus V_CB, V_P, exponential tail past pinch-off.
Visualization 6Low-frequency behaviour at any frequency; V_CB moves the rise.