Semiconductor Devices · Chapter 4 · Instructor: Prof. Mohammad Razaghi
Four animations and six interactive labs that run in any browser, with no installation, for Chapter 4 of Tsividis and McAndrew. The lab models are also in the Colab notebook.
The gate lowers the barrier, the drain tilts the channel: thermionic injection and drift.
Animation 2Electrons stream from source to drain; the channel thins and they speed up toward pinch-off.
Animation 3From weak to strong inversion: how the current is carried along the channel.
Animation 4Sweep the drain voltage: the area under Q′_I(V_CB) grows, then saturates.
Output and transfer curves from the complete all-region model, drift and diffusion components.
Visualization 2ψ_S(x), Q′_I(x), local drift and diffusion, electron velocity along the channel.
Visualization 3Trapezoid under the charge-balance line and area under −Q′_I(V_CB).
Visualization 4Complete vs strong-inversion (any α), α = 1, weak and single-piece models.
Visualization 5The (V_SB, V_DB) region map and I_DS = I_F − I_R.
Visualization 6Swing, n, temperature and the leakage floor.