Week 6: Nanotransistor explorer (point-channel model)

Nanotransistor explorer: the point-channel model (Datta Sec. 7.1–7.4, Eqs. 7.1–7.9)

A 2D channel (m = 0.2 m₀, g = 2, W = L = 1 µm) between a source (μ₁ = 0) and a drain (μ₂ = −qV_D). The gate lowers the band edge, the drain lowers it a little (α), and extra or missing electrons in the channel raise or lower it (charging, U₀). The potential U is found self-consistently (Fig. 7.7) and the current from I = (1/q)∫G(E)[f₁(E+U) − f₂(E+U)]dE (Eq. 7.7).

Gate voltage V_G Drain voltage V_D Drain control α (Eq. 7.3) Charging strength U₀D₀ = C_Q/C_E (Eq. 7.14) Temperature T

Current I (per µm width)–

Low-bias conductance dI/dV_D–

Channel potential U (self-consistent)–

Electrons N / N₀–