University of Kurdistan logoNanoelectronics · Week 10 Study ToolkitProf. Mohammad Razaghi
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WEEK 10 · THERMOELECTRICITY AND PHONONS · C5

Thermoelectricity, phonon transport and circular session C5

Study toolkit for students · based on S. Datta, Lessons from Nanoelectronics, Part A, Chapters 13–14
Prof. Mohammad Razaghi · University of Kurdistan

1This week's plan

Read
Datta Part A, Chapters 13–14 (pp. 171–193): thermoelectricity and phonon transport.
Run
Colab notebook week10_thermoelectric_C5.ipynb: Part 1 before class, Part 2 (C5 lab and design task) in the circular session.
Practise
Quiz (aim for 8/10), the practice problems, and prepare your C5 design defence (section 10).

By the end of the week you should be able to

  1. Explain why ΔT drives electrons hot → cold in n-type and cold → hot in p-type, with no positive charges.
  2. Compute G₀, GS, S = −GS/G₀, the power factor and ZT.
  3. Write the heat current, Π = TS and GK, and explain why a delta-function channel has GK = 0.
  4. Choose the level position that maximises the power factor (≈ 2kT from µ₀) and explain why ZT prefers a different one.
  5. Compute κph from (Mλ/A)ph, the ballistic T³ law, and ZT ≈ (Mλ/A)/(Mλ/A)ph.

Optional video: Datta's nanoHUB-U course, Unit 4: L4.2–L4.5 (thermoelectricity, phonons).

2Key ideas in five sentences

  1. Same current formula. I = (1/q)∫G(f₁ − f₂)dE also works when the contacts differ in temperature; f₁ − f₂ is then positive above µ and negative below.
  2. The sign of S comes from dG/dE. n-type (G rising) gives electrons hot → cold and S < 0; p-type gives S > 0. No positive particles needed.
  3. Figures of merit. Power factor S²G₀ (maximum power, Eq. 13.10) and ZT = S²G₀T/GK (efficiency, Eq. 13.12). Metals have |S| ≪ k/q; the best place for µ₀ is within a few kT of a band edge, S ≈ 2k/q.
  4. Heat currents. Every electron carries heat E − µ; Π = TS (Kelvin); a single sharp channel has GK = 0, but real materials also conduct heat through phonons.
  5. Phonons follow the same elastic-resistor formula with Bose functions: κph = (π²k²T/3h)(Mλ/A)ph; ZT ≈ (Mλ/A)/(Mλ/A)ph: "electron crystal, phonon glass".

3Equation sheet

I = (1/q)∫dE G(E)(f₁ − f₂)Eqs. 13.1–13.3
f₁, f₂ with their own µ and T.
I = G₀(V₁ − V₂) + GS(T₁ − T₂)Eq. 13.4
Linear response; V = µ/q is the electron voltage.
G₀ = ∫(−∂f₀/∂E)G dE,   GS = ∫(−∂f₀/∂E)((E − µ₀)/qT)G dEEqs. 13.5–13.6
Conductance and thermoelectric coefficient.
S = VOC/(T₁ − T₂) = −GS/G₀Eqs. 13.7–13.9
n-type: S < 0.
Pmax = S²G₀ΔT²/4Eq. 13.10
Matched load RL = 1/G₀; S²G₀ = power factor.
ZT = S²G₀T/GK = S²σ₀T/κEqs. 13.11–13.12
Thermoelectric figure of merit.
IQ1 = (1/q)∫dE((E − µ₁)/q)G(f₁ − f₂)Eqs. 13.13–13.15
IQ1 + IQ2 + (V₁ − V₂)I = 0.
S = −GS/G₀, Π = −GP/G₀, GK = GQ − GPGS/G₀Eqs. 13.16–13.18
GP = ∫(−∂f₀/∂E)((E − µ₀)/q)G, GQ = ∫(−∂f₀/∂E)((E − µ₀)²/q²T)G.
Π = TSEq. 13.19
Kelvin relation (GP = TGS).
S = −(ε − µ₀)/qT, Π = −(ε − µ₀)/q, GK = 0Eq. 13.21
Delta-function thermoelectric.
S²G₀ = G(ε)(Δε/kT)(k/q)²F(x), F = x²eˣ/(eˣ + 1)²Eqs. 13.22–13.23
Maximum at x = 2.40 (Datta ≈ 2): S ≈ 2k/q.
n(ω) = 1/(eħω/kT − 1)Eq. 14.5
Bose function, no µ.
GK = (k²T/h)∫dx(Mλ/(L + λ))phx²eˣ/(eˣ − 1)²Eqs. 14.6–14.8
Phonon heat conductance.
GK/A = π²k⁴T³/(10ħ³cs²)Eqs. 14.9–14.10
Ballistic phonons: T³ law, IQ ∝ T₁⁴ − T₂⁴.
κph = (π²k²T/3h)(Mλ/A)ph, ZT ≈ (Mλ/A)/(Mλ/A)phEqs. 14.2–14.4, 14.11
π²k²T/3h = 284 pW/K at 300 K.

4Physics refresher: heat, temperature and conductivity

Heat vs charge current

Charge current: C/s. Heat current: J/s, counted from µ, so an electron at energy E carries heat E − µ. Fourier's law IQ/A = −κ dT/dz is the thermal Ohm's law; GK = κA/L.

Electrons and phonons

κ = κe + κph. Metals: κe dominates and κe/(σT) = (π²/3)(k/q)² = 2.44 × 10⁻⁸ WΩ/K² (Wiedemann–Franz). Semiconductors and insulators: phonons usually dominate.

Where does (E − µ₀)/qT come from?∂f₀/∂T = ((E − µ₀)/T)(−∂f₀/∂E): raising T empties states below µ₀ and fills states above, exactly like raising µ but with opposite signs on the two sides. That turns the T-derivative into Eq. 13.6.
Fermi vs Bosef = 1/(e(E−µ)/kT + 1) lies between 0 and 1 (exclusion). n = 1/(eħω/kT − 1) can be ≫ 1 at low ω (many phonons in one mode) and has no µ because phonons are not conserved.

5Glossary

TermMeaning
Seebeck coefficient SOpen-circuit voltage per kelvin; negative for n-type.
Peltier coefficient ΠHeat carried per unit charge current; Π = TS.
Power factorS²G₀ (or S²σ): sets the maximum power from a given ΔT.
ZTDimensionless figure of merit S²σT/κ; sets the efficiency.
Wiedemann–Franz lawκe/(σT) = (π²/3)(k/q)² in metals.
PhononQuantum of lattice vibration; obeys Bose statistics.
Debye temperature θDAbove it all phonon modes are excited.
Electron crystal, phonon glassMaterial design: long λ for electrons, short λ for phonons.

6Calculators

Delta-function thermoelectric (Eqs. 13.21–13.23)

S = −(ε − µ₀)/qT
Π = TS
S²G₀ = G(ε)(Δε/kT)(k/q)²F(x)
Pmax = S²G₀ΔT²/4

Material figure of merit

Power factor S²σ
ZT = S²σT/(κe + κph)
Wiedemann–Franz κe = LσT
Π = TS

Phonons (Ch. 14)

κph = (π²k²T/3h)(Mλ/A)ph
ballistic GK/A (T³ law)
σ = (q²/h)(Mλ/A)
ZT ≈ 4(k/q)²Tσ/κph

7Self-check quiz

Click an answer: you get instant feedback. Score: 0 / 0

8Practice problems

k/q = 86.17 µV/K, (k/q)² = 7.43 × 10⁻⁹ V²/K², π²k²T/3h = 284 pW/K at 300 K, q²/h = 38.74 µS.

P1. A single levelEASY

A molecule conducts through one level 2kT above µ₀ at 300 K. Find S and Π.

SolutionS = −2k/q = −172 µV/K; Π = TS = −51.7 mV.
P2. Open-circuit voltageEASY

An n-type leg has S = −200 µV/K with ΔT = 50 K. How large is VOC, and which end is positive (conventional)?

Solution|VOC| = 200 µV/K × 50 K = 10 mV; the hot end is positive (electrons pile up at the cold end).
P3. Maximum powerEASY

The same leg has resistance 1 Ω. Find the maximum power into a matched load.

SolutionPmax = S²G₀ΔT²/4 = (2 × 10⁻⁴)² × 1 × 2500/4 = 25 µW.
P4. ZTMEDIUM

S = 200 µV/K, σ = 10⁵ S/m, κ = 1.5 W/m·K at 300 K. Find ZT.

SolutionZT = 4 × 10⁻⁸ × 10⁵ × 300/1.5 = 0.80.
P5. Wiedemann–FranzMEDIUM

Copper has σ = 5.96 × 10⁷ S/m at 300 K. Estimate κe.

Solutionκe = 2.443 × 10⁻⁸ × 5.96 × 10⁷ × 300 = 437 W/m·K (measured ≈ 400).
P6. Phonon conductivityMEDIUM

(M/A)ph = 4 × 10¹⁷ m⁻², λph = 15 nm at 300 K. Find κph. What λph would halve it?

Solutionκph = 284 pW/K × 4 × 10¹⁷ × 15 × 10⁻⁹ = 1.70 W/m·K; λph = 7.5 nm.
P7. Ballistic phononsMEDIUM

Find the ballistic phonon heat conductance per area at 10 K for cs = 5 km/s (Eq. 14.9). By what factor does it grow at 20 K?

Solutionπ²k⁴T³/(10ħ³cs²) = 1.22 × 10⁶ W/m²K; T³ ⇒ 8× at 20 K (well below θD).
P8. Peltier coolerMEDIUM

An n-type leg with S = −200 µV/K carries 2 A at 300 K. How much heat does it pump from the cold side (ignoring Joule heat and back-conduction)?

Solution|Π|I = 300 × 200 × 10⁻⁶ × 2 = 0.12 W.
P9. Delta-function power factorHARDER

A level with G(ε) = 1 mS and Δε = 0.1kT sits 2.4kT above µ₀ at 300 K. Find S²G₀.

HintUse Eq. 13.22 with F(2.4) = 0.439.
SolutionS²G₀ = 10⁻³ × 0.1 × 7.43 × 10⁻⁹ × 0.439 = 3.26 × 10⁻¹³ W/K² (S = −207 µV/K).
P10. Kelvin relationHARDER

Using Eqs. 13.6 and 13.17, show that GP = TGS and hence Π = TS.

SolutionGP = ∫(−∂f₀/∂E)((E − µ₀)/q)G dE = T∫(−∂f₀/∂E)((E − µ₀)/qT)G dE = TGS. So Π = −GP/G₀ = −TGS/G₀ = TS.

9Common mistakes

MISTAKE"p-type samples show the opposite thermopower because holes are positive."
CORRECTOnly electrons move; G(E) decreasing with E makes the part below µ win (Fig. 13.4).
MISTAKE"The Hall effect and the Seebeck effect change sign for the same reason."
CORRECTHall: m = p/v (needs E(p)). Seebeck: the slope of G(E) around µ (no E(p) needed).
MISTAKE"Good conductors make good thermoelectrics."
CORRECTMetals have |S| ≪ k/q because states above and below µ₀ cancel.
MISTAKE"Maximum power factor and maximum ZT occur at the same doping."
CORRECTZT also contains κe, which grows as µ₀ moves into the band; the ZT optimum sits closer to the band edge.
MISTAKE"No charge current means no heat current."
CORRECTTrue only for a single sharp channel; with several channels opposite currents carry net heat.
MISTAKE"Phonons need a µ like electrons."
CORRECTPhonons are not conserved: n(ω) has no µ, and no exclusion principle.

10Prepare for circular session C5

Block B lab (notebook Part 2)

B1 p-n I–V dark and lit (Week 9); B2 spin-valve MR vs Rch and spin flips; B3 a Bi₂Te₃-flavoured 3D band (m = 0.3m₀, 6 valleys, λ = 15 nm, κph = 1.2 W/m·K): S, σ, S²σ, ZT vs µ₀.

Block C design task

Choose the best thermoelectric level position and defend it. Decide (a) µ₀ relative to Ec, (b) whether nanostructuring (κph × ½, electron λ × 0.7) pays, (c) whether a delta-like band is better.

A defence template (three sentences)

  1. Goal: "We optimise for maximum power / maximum efficiency because …"
  2. Numbers: "At (Ec − µ₀)/kT = …, S = … µV/K, σ = … S/m, κe = …, κph = … W/m·K, so ZT = …"
  3. Trade-off: "Moving µ₀ up raises σ but lowers |S| and raises κe, because the window −∂f₀/∂E then sees states on both sides of µ₀."
Reference numbers (open after your group has decided)Best power factor ≈ 3.4 mW/m·K² at Ec − µ₀ ≈ −0.67kT (S ≈ −167 µV/K, ZT ≈ 0.56). Best ZT ≈ 0.63 at Ec − µ₀ ≈ +0.24kT (S ≈ −220 µV/K, κe ≈ 0.31 W/m·K). Nanostructured: best ZT ≈ 0.81 at ≈ +0.40kT, although the power factor drops ≈ 30%.

11Explore

Files are in the course folder (course_materials).

Mini-investigations (15 min each)

  1. In the thermoelectric widget, find the best power factor for α = 0, 0.5 and 1. How does the best position of µ₀ move, and why?
  2. Set the phonon conductance very small: where does the best ZT go? Very large?
  3. In the phonon widget, change θD from 165 K to 645 K (silicon). At what temperature does the ballistic conductance leave the T³ law?

12Can I…?

Tick what you can do without notes. Your ticks are saved in this browser.

13Looking ahead: Week 11

The second law and the fuel value of information (Datta Ch. 15–16): where the e−ħω/kT₀ of Week 9 and the Bose and Fermi functions come from, entropy, and why erasing a bit costs kT ln2.

  1. Why is absorbing energy from a bath harder than giving it up?
  2. A solar cell and a thermoelectric are both heat engines. What limits their efficiency?
  3. Can information be used as fuel?